BD441G
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Описание
Электроэлемент
Описание Транзистор: NPN, биполярный, 80В, 4А, 36Вт, TO126 Характеристики | Категория | Транзистор |
| Тип | биполярный |
| Вид | PNP |
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector-Emitter Saturation Voltage | 0.8 V |
| Configuration | Single |
| Continuous Collector Current | 4 A |
| DC Collector/Base Gain hfe Min | 15 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 500 |
| Gain Bandwidth Product fT | 3 MHz |
| Height | 11.04 mm(Max) |
| Length | 7.74 mm(Max) |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 4 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-225-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 36 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BD441 |
| Transistor Polarity | NPN |
| Width | 2.66 mm(Max) |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Type | NPN |
| Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.8@0.2A@2A |
| Maximum DC Collector Current (A) | 4 |
| Minimum DC Current Gain | 15@2A@1V|40@0.5A@1V|30@3A@1V|15@10mA@5V |
| Maximum Power Dissipation (mW) | 36000 |
| Maximum Transition Frequency (MHz) | 3(Min) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | TO-225 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 11.04(Max) |
| Package Length | 7.74(Max) |
| Package Width | 2.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 78 КБ
