FJV992FMTF
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Описание
Электроэлемент
TRANSISTOR, PNP, -120V, -0.05A, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-50mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Base Voltage VCBO | -120 V |
| Collector- Emitter Voltage VCEO Max | -120 V |
| Collector-Emitter Saturation Voltage | -300 mV |
| Configuration | Single |
| Continuous Collector Current | -0.05 A |
| DC Collector/Base Gain hfe Min | 200 |
| DC Current Gain hFE Max | 800 |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 50 MHz |
| Height | 0.93 mm |
| Length | 2.92 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.05 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 0.3 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | FJV992 |
| Transistor Polarity | PNP |
| Width | 1.3 mm |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory | Transistors |
| Brand: | onsemi/Fairchild |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| Continuous Collector Current: | -50 mA |
| DC Collector/Base Gain hfe Min: | 200 |
| DC Current Gain hFE Max: | 800 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 50 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 50 mA |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FJV992 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Emitter Voltage Max | 120В |
| DC Current Gain hFE Min | 300hFE |
| DC Усиление Тока hFE | 300hFE |
| Power Dissipation | 300мВт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | PNP |
| Стиль Корпуса Транзистора | SOT-23 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Частота Перехода ft | 50МГц |
| Maximum Collector Base Voltage | -120 V |
| Maximum Collector Emitter Voltage | -120 V |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Frequency | 50 MHz |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Gain | 300 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.4 |
Техническая документация
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Datasheet FJV992FMTF
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