ISL9V3036D3S
3 640 ֏
от 2 шт. —
3 070 ֏
от 5 шт. —
2 730 ֏
от 10 шт. —
2 550 ֏
Добавить в корзину 1 шт.
на сумму 3 640 ֏
Описание
Электроэлемент
Insulated Gate Bipolar Transistor, 21A, 350V, N-Channel, TO-252AA
Технические параметры
| Collector- Emitter Voltage VCEO Max | 360 V |
| Collector-Emitter Breakdown Voltage | 360 V |
| Collector-Emitter Saturation Voltage | 1.25 V |
| Configuration | Single |
| Continuous Collector Current Ic Max | 21 A |
| Gate-Emitter Leakage Current | 150 W |
| Manufacturer | Fairchild Semiconductor |
| Maximum Gate Emitter Voltage | 10 V |
| Package / Case | DPAK |
| Packaging | Tube |
| Power Dissipation | 150 W |
| Product Category | IGBT Transistors |
| Вес, г | 0.5 |
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