APT15GP60BDQ1G, IGBT Transistors IGBT PT MOS 7 Combi 600 V 15 A TO-247
6 900 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 2.2 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 56 A |
| Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Packaging: | Tube |
| Pd - Power Dissipation: | 250 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 6 |
Техническая документация
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