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RGT50NL65DGTL, IGBT Transistors RGT50NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General

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1125 шт., срок 8-10 недель

4 290 ֏

от 10 шт. — 3 420 ֏

от 25 шт. — 3 140 ֏

от 100 шт. — 2 440 ֏

Добавить в корзину 1 шт. на сумму 4 290 ֏

Альтернативные предложения1

Номенклатурный номер: 8004638638

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

Технические параметры

Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	48 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Package/Case:	TO-263L-3
Packaging:	Reel, Cut Tape
Part # Aliases:	RGT50NL65D
Pd - Power Dissipation:	194 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	1