Jantx2N5416S, Bipolar Transistors - BJT 300 V Power BJT
13 100 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярные транзисторы - BJT Power BJT
Технические параметры
| Brand: | Microchip/Microsemi |
| Collector- Base Voltage VCBO: | 350 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 2 V |
| Configuration: | Single |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Through Hole |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 750 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 1 |
Техническая документация
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