2N5002, Bipolar Transistors - BJT Power BJT
323 000 ֏
от 10 шт. —
301 000 ֏
Добавить в корзину 1 шт.
на сумму 323 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Microchip Technology |
| Collector- Base Voltage VCBO: | 100 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Configuration: | Single |
| Emitter- Base Voltage VEBO: | 5.5 V |
| Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Stud Mount |
| Packaging: | Tray |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 7 |
Техническая документация
Datasheet
pdf, 50 КБ
