Jan2N3716, Bipolar Transistors - BJT Power BJT
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярные транзисторы - BJT Power BJT
Технические параметры
Brand: | Microchip/Microsemi |
Collector- Base Voltage VCBO: | 80 V |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector-Emitter Saturation Voltage: | 1 V |
Configuration: | Single |
Emitter- Base Voltage VEBO: | 7 V |
Factory Pack Quantity: | 1 |
Manufacturer: | Microchip |
Maximum DC Collector Current: | 10 A |
Maximum Operating Temperature: | +200 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | Through Hole |
Packaging: | Tray |
Pd - Power Dissipation: | 5 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 69 |
Техническая документация
Datasheet
pdf, 53 КБ
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