Jantx2N6058, Darlington Transistors 80V 20A 150W NPN Power BJT THT
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors
Биполярный (BJT) транзистор NPN - Darlington 80V 12A 150W Through Hole TO-3
Технические параметры
| Brand: | Microchip/Microsemi |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Packaging: | Tray |
| Product Category: | Darlington Transistors |
| Product Type: | Darlington Transistors |
| Subcategory: | Transistors |
| Base Product Number | 2N6058 -> |
| Current - Collector (Ic) (Max) | 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Notification | QPL or Military Specs are for reference only. Part |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Power - Max | 150W |
| REACH Status | REACH Unaffected |
| RoHS Status | RoHS non-compliant |
| Series | Military, MIL-PRF-19500/502 -> |
| Supplier Device Package | TO-3 |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Вес, г | 1 |
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