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MSC010SDA070K, Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD

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3 160 ֏

от 25 шт. — 2 730 ֏

от 100 шт. — 2 540 ֏

Добавить в корзину 1 шт. на сумму 3 160 ֏

Номенклатурный номер: 8004810312

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Технические параметры

Brand:	Microchip Technology
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
If - Forward Current:	10 A
Ifsm - Forward Surge Current:	90 A
Ir - Reverse Current:	200 uA
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-220-2
Packaging:	Tube
Product Category:	Schottky Diodes & Rectifiers
Product Type:	Schottky Diodes & Rectifiers
Product:	Schottky Silicon Carbide Diodes
Series:	MSC0
Subcategory:	Diodes & Rectifiers
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	700 V
Vrrm - Repetitive Reverse Voltage:	700 V
Maximum Continuous Forward Current	10A
Mounting Type	Through Hole
Package Type	TO-220
Peak Reverse Repetitive Voltage	700V
Series	MSC0
Diode Technology	Schottky Barrier
Diode Type	SiC Schottky
Rectifier Type	Schottky Diode
Вес, г	1