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MSC050SDA120B, Schottky Diodes & Rectifiers SIC SBD 1200 V 50 A TO-247

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20 300 ֏

от 10 шт. — 17 800 ֏

от 30 шт. — 14 800 ֏

от 120 шт. — 13 500 ֏

Добавить в корзину 1 шт. на сумму 20 300 ֏

Номенклатурный номер: 8004810329

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Технические параметры

Brand:	Microchip Technology
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
If - Forward Current:	50 A
Ifsm - Forward Surge Current:	290 A
Ir - Reverse Current:	200 uA
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-2
Packaging:	Tube
Pd - Power Dissipation:	429 W
Product Category:	Schottky Diodes & Rectifiers
Product Type:	Schottky Diodes & Rectifiers
Product:	Schottky Silicon Carbide Diodes
Series:	MSC0
Subcategory:	Diodes & Rectifiers
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Base Product Number	MSC050 ->
ECCN	EAR99
HTSUS	8541.10.0080
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Package	Tube
RoHS Status	RoHS Compliant
Series	*
Вес, г	11.94