CSD18532KCS, MOSFET 60-V N-Chanel NxFT Pwr MOSFETs
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
TI N-Channel 8-23-12
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 5.6 ns |
Forward Transconductance - Min: | 187 S |
Id - Continuous Drain Current: | 169 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 250 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 44 nC |
Rds On - Drain-Source Resistance: | 4.2 mOhms |
Rise Time: | 5.3 ns |
Series: | CSD18532KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 24.2 ns |
Typical Turn-On Delay Time: | 7.8 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Вес, г | 6 |