ISO5851DWR, Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features 16-SOIC
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Описание
Semiconductors\Power Management ICs\Galvanically Isolated Gate Drivers
ISO5851/ISO5851-Q1 IGBT/MOSFET Gate DriverTexas Instruments ISO5851/ISO5851-Q1 Isolated IGBT/MOSFET Gate Driver is a 5.7kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5A source and 5A sink current. The input side operates from a single 3V to 5.5V supply. The output side allows for a supply range from minimum 15V to maximum 30V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns assures accurate control of the output stage. Typical applications include industrial motor control drives, industrial power supplies, solar inverters, HEV and EV power modules, and induction heating. The ISO5851-Q1 devices are AEC-Q100 qualified for automotive applications.
Технические параметры
Brand: | Texas Instruments |
Configuration: | Inverting, Non-Inverting |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Fall Time: | 20 ns |
Isolation Voltage: | 8 kV |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +125 C |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Drivers: | 1 Driver |
Number of Outputs: | 1 Output |
Output Current: | 2.5 A |
Output Voltage: | 15 V to 30 V |
Package / Case: | SOIC-16 |
Pd - Power Dissipation: | 600 mW |
Product Category: | Galvanically Isolated Gate Drivers |
Product Type: | Galvanically Isolated Gate Drivers |
Product: | Isolated Gate Drivers |
Propagation Delay - Max: | 110 ns |
Rise Time: | 20 ns |
Series: | ISO5851 |
Subcategory: | PMIC-Power Management ICs |
Supply Voltage - Max: | 5.5 V |
Supply Voltage - Min: | 3 V |
Technology: | Si |
Вес, г | 0.67 |