MOSFET and IGBT drivers
792
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Brand: ON Semiconductor
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.6…13.2
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2
Input type: Inverting, Non-inverting
Maximum bias voltage, V: 35
Rise Time, ns: 20
Nominal decay time (Fall Time), ns: 11
Operating temperature, ° C: 0…+150(TJ)
Housing: DFN-8 EP(3x3)
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910 ֏
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610 ֏ from 5 pcs. — 570 ֏
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Brand: Fairchild
Configuration: Low-Side
Channel type: One
Number of channels: 1
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2
Peak output current rise (Source), A: 3
Peak output current slope (Sink), A: 3
Input type: Inverting, Non-inverting
Rise Time, ns: 13
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -55…+150(TJ)
Housing: SOT-23-5
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1 820 ֏
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1 350 ֏ from 5 pcs. — 1 320 ֏
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Brand: ON Semiconductor
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 38
Logic voltage (VIH), V: 2
Peak output current rise (Source), A: 5
Peak output current slope (Sink), A: 5
Input type: non-inverting
Rise Time, ns: 12
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -40…+125(TA)
Housing: soic-8(0.154 inch)
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2 190 ֏
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1 680 ֏ from 5 pcs. — 1 660 ֏
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Brand: ON Semiconductor
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 0.09
Peak output current slope (Sink), A: 0.18
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 230
Nominal decay time (Fall Time), ns: 90
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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1 280 ֏
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870 ֏ from 5 pcs. — 840 ֏
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Brand: ON Semiconductor
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 15…20
Logic voltage (VIL), V: 1.2
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 50
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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1 940 ֏
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1 390 ֏ from 5 pcs. — 1 360 ֏
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Brand: ON Semiconductor
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 15…20
Logic voltage (VIL), V: 1.2
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 50
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150 (TJ)
Housing: SOP-14 (0.209 inch)
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2 430 ֏
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1 740 ֏ from 5 pcs. — 1 710 ֏
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Brand: ON Semiconductor
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 200
Rise Time, ns: 60
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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1 160 ֏
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950 ֏ from 5 pcs. — 940 ֏
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5-7 days, 72 pcs.
Brand: Intersil
Configuration: half-bridge
Channel type: independent
Number of channels: 4
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 8.5…15
Logic voltage (VIL), V: 1
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 1.5
Peak output current slope (Sink), A: 1.5
Input type: non-inverting
Maximum bias voltage, V: 95
Rise Time, ns: 9
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -55…+150(TJ)
Housing: soic-16(0.154 inch)
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5-7 days, 72 pcs. |
16 800 ֏
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14 300 ֏ from 15 pcs. — 14 200 ֏
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5-7 days, 61 pcs.
Brand: Intersil
Configuration: half-bridge
Channel type: independent
Number of channels: 4
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 8.5…15
Logic voltage (VIL), V: 1
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 1.5
Peak output current slope (Sink), A: 1.5
Input type: non-inverting
Maximum bias voltage, V: 95
Rise Time, ns: 9
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -55…+150(TJ)
Housing: dip-16(0.300 inch)
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5-7 days, 61 pcs. |
5 300 ֏
×
4 300 ֏ from 5 pcs. — 4 270 ֏
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Brand: Infineon
Configuration: Low-Side
Channel type: One
Number of channels: 1
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 12…18
Logic voltage (VIL), V: 2
Logic voltage (VIH), V: 2.15
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 7
Input type: non-inverting
Rise Time, ns: 18
Nominal decay time (Fall Time), ns: 10
Operating temperature, ° C: -25…+125(TJ)
Housing: soic-8(0.154 inch)
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1 940 ֏
×
1 400 ֏ from 5 pcs. — 1 380 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 3
Peak output current slope (Sink), A: 3
Input type: non-inverting
Maximum bias voltage, V: 200
Rise Time, ns: 10
Nominal decay time (Fall Time), ns: 15
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-14(0.300 inch)
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3 760 ֏
×
2 950 ֏ from 5 pcs. — 2 920 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 3
Peak output current slope (Sink), A: 3
Input type: non-inverting
Maximum bias voltage, V: 200
Rise Time, ns: 10
Nominal decay time (Fall Time), ns: 15
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-16(0.295 inch)
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3 820 ֏
×
2 900 ֏ from 5 pcs. — 2 870 ֏
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Brand: Infineon
Configuration: High-Side/Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.7
Logic voltage (VIH), V: 2.2
Peak output current rise (Source), A: 1
Peak output current slope (Sink), A: 1
Input type: inverting
Maximum bias voltage, V: 200
Rise Time, ns: 35
Nominal decay time (Fall Time), ns: 20
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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2 850 ֏
×
2 120 ֏ from 5 pcs. — 2 090 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 160 ֏
×
900 ֏ from 5 pcs. — 870 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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407 ֏
×
from 10 pcs. — 383 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 700 ֏
×
1 240 ֏ from 5 pcs. — 1 210 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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1 460 ֏
×
1 140 ֏ from 5 pcs. — 1 120 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: Inverting, Non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 280 ֏
×
930 ֏ from 5 pcs. — 910 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: Inverting, Non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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910 ֏
×
610 ֏ from 5 pcs. — 520 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 400 ֏
×
1 020 ֏ from 5 pcs. — 970 ֏
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