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RGT8BM65DTL, IGBT Transistors 650V 4A IGBT Stop Trench

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2160 шт., срок 8-10 недель

2 860 ֏

от 10 шт. — 2 250 ֏

от 100 шт. — 1 680 ֏

от 250 шт. — 1 510 ֏

Добавить в корзину 1 шт. на сумму 2 860 ֏

Номенклатурный номер: 8005265146

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

Технические параметры

Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Continuous Collector Current at 25 C:	8 A
Continuous Collector Current Ic Max:	8 A
Continuous Collector Current:	4 A
Factory Pack Quantity: Factory Pack Quantity:	2500
Gate-Emitter Leakage Current:	+/-200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Operating Temperature Range:	-40 C to+175 C
Package / Case:	TO-252-3
Part # Aliases:	RGT8BM65D
Pd - Power Dissipation:	62 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	RGT8BM65D
Subcategory:	IGBTs
Technology:	Si
Вес, г	3.95