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RGTV00TS65DGC11, IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT

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446 шт., срок 8-10 недель

8 400 ֏

от 10 шт. — 7 000 ֏

от 25 шт. — 6 200 ֏

от 100 шт. — 5 300 ֏

Добавить в корзину 1 шт. на сумму 8 400 ֏

Номенклатурный номер: 8005265164

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

RGTV 650V Field Stop Trench IGBTs

ROHM Semiconductor RGTV 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGTV IGBTs feature high-speed switching, low switching loss, and a short circuit withstand time 2µs. The ROHM RGTV 650V Field Stop Trench IGBTs are ideal for Solar Inverter, UPS, Welding, IH, and PFC applications.

Технические параметры

Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	95 A
Continuous Collector Current Ic Max:	95 A
Factory Pack Quantity: Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-247N-3
Packaging:	Tube
Part # Aliases:	RGTV00TS65D
Pd - Power Dissipation:	276 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	12.87