IKQ75N120CS6XKSA1
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Описание
Электроэлемент
IGBT, 1.2KV, 150A, 880W, TO-247; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:880W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pi
Технические параметры
| Current - Collector (Ic) (Max) | 150A |
| Current - Collector Pulsed (Icm) | 300A |
| Gate Charge | 530nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 880W |
| Reverse Recovery Time (trr) | 440ns |
| Series | TrenchStopв(ў |
| Supplier Device Package | PG-TO247-3-46 |
| Switching Energy | 5.15mJ(on), 2.95mJ(off) |
| Td (on/off) @ 25В°C | 34ns/300ns |
| Test Condition | 600V, 75A, 4Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 75A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Automotive | No |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 150 |
| Maximum Gate Emitter Leakage Current (uA) | 0.6 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 880 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Supplier Package | TO-247 |
| Tab | Tab |
| Technology | Trench Stop |
| Typical Collector Emitter Saturation Voltage (V) | 1.85 |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 150 A |
| Maximum Gate Emitter Voltage | 25V |
| Maximum Power Dissipation | 880 W |
| Number of Transistors | 1 |
| Package Type | PG-TO247 |
| Transistor Configuration | Single |
| Вес, г | 10.3 |
Техническая документация
Datasheet
pdf, 2016 КБ
Datasheet IKQ75N120CS6XKSA1
pdf, 2072 КБ
