KSC5502DTM
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1 830 ֏
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1 600 ֏
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Описание
Электроэлемент
TRANSISTOR, NPN, 600V, 2A, TO252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency ft:11MHz; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Category | Bipolar Power |
| Collector Current (DC) | 2(A) |
| Collector-Base Voltage | 1200(V) |
| Configuration | Single |
| DC Current Gain | 15@200MA@1V/4@1A@1V |
| Emitter-Base Voltage | 12(V) |
| Frequency | 11(MHz) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -65C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Package Type | DPAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Power Dissipation | 50(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |
| Brand: | onsemi/Fairchild |
| Collector- Base Voltage VCBO: | 1.2 kV |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Configuration: | Single |
| Continuous Collector Current: | 2 A |
| DC Collector/Base Gain hfe Min: | 14 |
| Emitter- Base Voltage VEBO: | 12 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 11 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 87.83 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | KSC5502D |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Maximum Collector Base Voltage | 1200 V |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum DC Collector Current | 2 A |
| Maximum Emitter Base Voltage | 12 V |
| Maximum Operating Frequency | 1 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum DC Current Gain | 12 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Вес, г | 0.557 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet
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Datasheet KSC5502DTTU
pdf, 438 КБ
