IHW30N110R3
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Описание
Электроэлемент
Транзистор IGBT, 1,1кВ, 30А, 166Вт, TO247-3
Технические параметры
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1100 V |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 60 A |
| Factory Pack Quantity | 240 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247 |
| Packaging | Tube |
| Part # Aliases | IHW30N110R3FKSA1 IHW30N110R3XK SP000702510 |
| Pd - Power Dissipation | 333 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | IHW30N110 |
| Technology | Si |
| Unit Weight | 0.229281 oz |
| Case | TO247-3 |
| Collector current | 30A |
| Collector-emitter voltage | 1.1kV |
| Features of semiconductor devices | reverse conducting IGBT(RC-IGBT) |
| Gate charge | 180nC |
| Gate-emitter voltage | ±20V |
| Kind of package | tube |
| Mounting | THT |
| Power dissipation | 166W |
| Pulsed collector current | 90A |
| Semiconductor structure | single transistor |
| Turn-off time | 470ns |
| Type of transistor | IGBT |
| Вес, г | 11.7 |
Техническая документация
Datasheet
pdf, 1856 КБ
