SI3585CDV-T1-GE3, Биполярный транзистор N/P 20В 3.5A/1.9A 6-Pin TSOP
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Описание
транзисторы биполярные импортные
Integrated MOSFET SolutionsVishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Технические параметры
Brand | Vishay/Siliconix |
Channel Mode | Enhancement |
Configuration | Dual |
Factory Pack Quantity | 3000 |
Fall Time | 9 ns, 28 ns |
Forward Transconductance - Min | 1 S, 12 S |
Id - Continuous Drain Current | 2.1 A, 3.9 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 2 Channel |
Package / Case | TSOP-6 |
Packaging | Cut Tape or Reel |
Part # Aliases | SI3585CDV-GE3 |
Pd - Power Dissipation | 1.3 W, 1.4 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 3.2 nC, 6 nC |
Rds On - Drain-Source Resistance | 58 mOhms, 195 mOhms |
Rise Time | 16 ns, 37 ns |
Series | SI3 |
Subcategory | MOSFETs |
Technology | Si |
Tradename | TrenchFET |
Transistor Polarity | N-Channel, P-Channel |
Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 13 ns, 25 ns |
Typical Turn-On Delay Time | 15 ns, 16 ns |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | 4.5 V |
Vgs Th - Gate-Source Threshold Voltage | 600 mV |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 9 ns, 28 ns |
Forward Transconductance - Min: | 1 S, 12 S |
Id - Continuous Drain Current: | 2.1 A, 3.9 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package/Case: | TSOP-6 |
Part # Aliases: | SI3585CDV-GE3 |
Pd - Power Dissipation: | 1.3 W, 1.4 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 3.2 nC, 6 nC |
Rds On - Drain-Source Resistance: | 58 mOhms, 195 mOhms |
Rise Time: | 16 ns, 37 ns |
Series: | SI3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel, P-Channel |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time: | 13 ns, 25 ns |
Typical Turn-On Delay Time: | 15 ns, 16 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Вес, г | 1 |