Главная › Электронные компоненты › Транзисторы › Биполярные с изолированным затвором (IGBTs) › Rohm › RGT40TS65DGC13 Single IGBT, 40 650 V TO-247GE

RGT40TS65DGC13 Single IGBT, 40 650 V TO-247GE

Изображения служат только для ознакомления,
см. техническую документацию

30 шт., срок 8 недель

7 300 ֏

Добавить в корзину 1 шт. на сумму 7 300 ֏

Альтернативные предложения1

Номенклатурный номер: 8017108275

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\IGBTs

The ROHM RGT series is field stop trench IGBT have built in very fast and soft recovery FRD system which are available in TO-247GE package and can be used in general inverter, UPS, power conditioner and welder applications.

Технические параметры

Configuration	Single
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	40
Maximum Gate Emitter Voltage	±30V
Maximum Power Dissipation	1.44 mW
Number of Transistors	1
Package Type	TO-247GE
Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	40 A
Continuous Collector Current Ic Max:	40 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Part # Aliases:	RGT40TS65D
Pd - Power Dissipation:	144 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	1