JFE150DBVR, JFET Ultra-low-noise, low-gate-current audio N-channel JFET 5-SOT-23 -40 to 125
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 540 ֏
от 10 шт. —
2 780 ֏
от 100 шт. —
1 960 ֏
от 250 шт. —
1 810 ֏
Добавить в корзину 1 шт.
на сумму 3 540 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\JFET
JFE150 Audio N-Channel JFETTexas Instruments JFE150 Audio N-Channel JFET is a Burr-Brown™ discrete JFET built using Texas Instruments" modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50µA to 20mA. When biased at 5mA, the device yields 0.8nV/ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to protect without the addition of high leakage, nonlinear external diodes.
Технические параметры
Brand: | Texas Instruments |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 3 mS |
Gate-Source Cutoff Voltage: | -1.2 V |
Id - Continuous Drain Current: | 50 mA |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +125 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-5 |
Packaging: | Reel, Cut Tape |
Product Category: | JFET |
Product Type: | JFETs |
Series: | JFE150 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Breakdown Voltage: | -40 V |
Вес, г | 1 |