APT35GN120L2DQ2G, Транзистор IGBT
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см. техническую документацию
см. техническую документацию
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Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 94 A |
| Continuous Collector Current Ic Max: | 94 A |
| Continuous Collector Current: | 94 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 600 nA |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Operating Temperature Range: | -55 C to+150 C |
| Package / Case: | TO-264MAX-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 379 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 15 |
Техническая документация
Datasheet
pdf, 240 КБ
