KSD794AYSTU, Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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см. техническую документацию
см. техническую документацию
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Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Base Voltage VCBO: | 70 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3 A |
| DC Collector/Base Gain hfe Min: | 160 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1920 |
| Gain Bandwidth Product fT: | 60 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-126-3 |
| Packaging: | Tube |
| Part # Aliases: | KSD794AYSTU_NL |
| Pd - Power Dissipation: | 10 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | KSD794A |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.76 |
Техническая документация
Datasheet
pdf, 170 КБ
