1N5820G, Schottky Diodes & Rectifiers 3A 20V
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см. техническую документацию
см. техническую документацию
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Описание
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange.
Технические параметры
Automotive | No |
Configuration | Single |
Diameter | 5.3(Max) |
ECCN (US) | EAR99 |
Lead Shape | Through Hole |
Material | Si |
Maximum Continuous Forward Current (A) | 3 |
Maximum DC Reverse Voltage (V) | 20 |
Maximum Junction Ambient Thermal Resistance | 28°C/W |
Maximum Operating Temperature (°C) | 125 |
Maximum RMS Reverse Voltage (V) | 14 |
Minimum Operating Temperature (°C) | -65 |
Mounting | Through Hole |
Packaging | Bag |
Part Status | Active |
PCB changed | 2 |
Peak Forward Voltage (V) | 0.85@9.4A |
Peak Non-Repetitive Surge Current (A) | 80 |
Peak Reverse Current (uA) | 2000 |
Peak Reverse Repetitive Voltage (V) | 20 |
Pin Count | 2 |
PPAP | No |
Standard Package Name | DO-201-AD |
Supplier Package | DO-201AD |
Type | Schottky Diode |
Diode Configuration | Single |
Diode Technology | Schottky Barrier |
Diode Type | Schottky |
Maximum Continuous Forward Current | 3A |
Maximum Forward Voltage Drop | 850mV |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | DO-201AD |
Peak Non-Repetitive Forward Surge Current | 80A |
Peak Reverse Repetitive Voltage | 20V |
Rectifier Type | Schottky Rectifier |
Вес, г | 1.152 |
Техническая документация
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