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MOSFET and IGBT drivers Infineon

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IR2101PBF, MOSFET/IGBT Driver, Half-Bridge, Non-inverting, 0.21/0.36A, 600V [DIP-8.] 878 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-8(0.300 inch)	quick view	878 pcs.	1 140 ֏ ×	from 5 pcs. — 1 020 ֏
IR2104PBF, Semi-bridge driver, [DIP-8.] 771 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: synchronous Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-8(0.300 inch)	quick view	771 pcs.	980 ֏ ×	from 5 pcs. — 930 ֏
IR2110PBF, Driver for keys of the lower and upper levels, 500V, 2A, [DIP-14] 368 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 3.3…20 Logic voltage (VIL), V: 6 Logic voltage (VIH), V: 9.5 Peak output current rise (Source), A: 2 Peak output current slope (Sink), A: 2 Input type: non-inverting Maximum bias voltage, V: 500 Rise Time, ns: 25 Nominal decay time (Fall Time), ns: 17 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-14	quick view	368 pcs.	910 ֏ ×	from 5 pcs. — 780 ֏
IR2153DPBF, Self-actuating semi-bridge driver [DIP-8.] 322 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: synchronous Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…15.6 Input type: RC input circuit Maximum bias voltage, V: 600 Rise Time, ns: 80 Nominal decay time (Fall Time), ns: 45 Operating temperature, ° C: -40…+125(TJ) Housing: DIP-8(0.300 inch)	quick view	322 pcs.	1 320 ֏ ×	from 5 pcs. — 1 120 ֏
IR2181STRPBF, Half Bridge Driver, [SO-8] 199 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 2.7 Peak output current rise (Source), A: 1.9 Peak output current slope (Sink), A: 2.3 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 40 Nominal decay time (Fall Time), ns: 20 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8(0.154 inch)	quick view	199 pcs.	3 100 ֏ 970 ֏ ×	from 15 pcs. — 820 ֏
IR21844STRPBF, Half Bridge Driver, [SO-14] 327 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 2.7 Peak output current rise (Source), A: 1.9 Peak output current slope (Sink), A: 2.3 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 40 Nominal decay time (Fall Time), ns: 20 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-14(0.154 inch)	quick view	327 pcs.	6 400 ֏ 2 270 ֏ ×	from 5 pcs. — 1 920 ֏
IR4427PBF, Dual Low Level Key Driver, [DIP-8] 325 pcs. Brand: Infineon Configuration: Low-Side Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 6…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 2.7 Peak output current rise (Source), A: 2.3 Peak output current slope (Sink), A: 3.3 Input type: non-inverting Rise Time, ns: 15 Nominal decay time (Fall Time), ns: 10 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-8	quick view	325 pcs.	1 460 ֏ 1 150 ֏ ×	from 15 pcs. — 980 ֏
IRS21867STRPBF, HIGH AND LOW SIDE Driver [SO-8] 1175 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 2.5 Peak output current rise (Source), A: 4 Peak output current slope (Sink), A: 4 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 22 Nominal decay time (Fall Time), ns: 18 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8	quick view	1175 pcs.	2 750 ֏ ×	from 5 pcs. — 2 330 ֏
1EDN7512B, Driver non-/inverting dual output of upper and lower arm half-bridge [SOT-23-5] 6 days, 1070 pcs. Brand: Infineon	quick view	6 days, 1070 pcs.	215 ֏ ×	from 15 pcs. — 183 ֏
2ED020I12-FI, IGBT Dual driver [PG-DSO-18-2] 6 days, 88 pcs. Brand: Infineon	quick view	6 days, 88 pcs.	1 380 ֏ ×	from 15 pcs. — 1 170 ֏
IR1167BSTRPBF, Intelligent synchronous Rectifier control driver, [SOIC-8.][EOL] 6 days, 113 pcs. Brand: Infineon Configuration: Low-Side Channel type: One Number of channels: 1 Type of controlled shutter: N-CH MOSFET Supply voltage, V: 12…18 Logic voltage (VIL), V: 2 Logic voltage (VIH), V: 2.15 Peak output current rise (Source), A: 2 Peak output current slope (Sink), A: 7 Input type: non-inverting Rise Time, ns: 18 Nominal decay time (Fall Time), ns: 10 Operating temperature, ° C: -25…+125(TJ) Housing: SOIC-8(0.154 inch)	quick view	6 days, 113 pcs.	1 940 ֏ 1 250 ֏ ×	from 5 pcs. — 1 060 ֏
IR2010PBF, MOSFET/IGBT Driver, Non-Inverting Input, 2-OUT, High and Low-Side, Half Bridge [DIP-14] 6 days, 813 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 6 Logic voltage (VIH), V: 9.5 Peak output current rise (Source), A: 3 Peak output current slope (Sink), A: 3 Input type: non-inverting Maximum bias voltage, V: 200 Rise Time, ns: 10 Nominal decay time (Fall Time), ns: 15 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-14(0.300 inch)	quick view	6 days, 813 pcs.	3 760 ֏ 2 840 ֏ ×	from 5 pcs. — 2 820 ֏
IR2010STRPBF, Upper and Lower level key driver, [SOIC-16W.] 6 days, 143 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 6 Logic voltage (VIH), V: 9.5 Peak output current rise (Source), A: 3 Peak output current slope (Sink), A: 3 Input type: non-inverting Maximum bias voltage, V: 200 Rise Time, ns: 10 Nominal decay time (Fall Time), ns: 15 Operating temperature, ° C: -40…+150(TJ) Housing: soic-16(0.295 inch)	quick view	6 days, 143 pcs.	1 040 ֏ ×	from 5 pcs. — 880 ֏
IR2011STRPBF, Upper and Lower level key driver, [SO-8N.] 6 days, 29 pcs. Brand: Infineon Configuration: High-Side/Low-Side Channel type: independent Number of channels: 2 Type of controlled shutter: N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.7 Logic voltage (VIH), V: 2.2 Peak output current rise (Source), A: 1 Peak output current slope (Sink), A: 1 Input type: inverting Maximum bias voltage, V: 200 Rise Time, ns: 35 Nominal decay time (Fall Time), ns: 20 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8(0.154 inch)	quick view	6 days, 29 pcs.	590 ֏ ×	from 5 pcs. — 494 ֏
IR2101STRPBF, MOSFET/IGBT Driver, Half-Bridge, Non-inverting, 0.21/0.36A, 600V [SOIC-8.] 6 days, 779 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8(0.154 inch)	quick view	6 days, 779 pcs.	232 ֏ ×	from 10 pcs. — 215 ֏
IR2102PBF, High and Low Level Key Driver, [DIP-8] 6 days, 116 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-8(0.300 inch)	quick view	6 days, 116 pcs.	1 700 ֏ 1 190 ֏ ×	from 5 pcs. — 1 170 ֏
IR2102STRPBF, Upper and lower level key driver [SOIC-8.] 6 days, 257 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8(0.154 inch)	quick view	6 days, 257 pcs.	467 ֏ ×	from 5 pcs. — 396 ֏
IR2103PBF, Semi-bridge driver [DIP-8.] [EOL] 6 days, 135 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: inverting, non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: DIP-8(0.300 inch)	quick view	6 days, 135 pcs.	1 280 ֏ 850 ֏ ×	from 5 pcs. — 720 ֏
IR2103STRPBF, FET-IGBT driver, [SO-8.] 6 days, 160 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: independent Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: inverting, non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8(0.154 inch)	quick view	6 days, 160 pcs.	910 ֏ 307 ֏ ×	from 5 pcs. — 262 ֏
IR2104STRPBF, Semi-bridge HIGH/LOW SIDE driver [SOIC-8.] (=IR2104SPBF) 6 days, 2611 pcs. Brand: Infineon Configuration: Half-Bridge Channel type: synchronous Number of channels: 2 Type of controlled shutter: IGBT, N-CH MOSFET Supply voltage, V: 10…20 Logic voltage (VIL), V: 0.8 Logic voltage (VIH), V: 3 Peak output current rise (Source), A: 0.21 Peak output current slope (Sink), A: 0.36 Input type: non-inverting Maximum bias voltage, V: 600 Rise Time, ns: 100 Nominal decay time (Fall Time), ns: 50 Operating temperature, ° C: -40…+150(TJ) Housing: SOIC-8(0.154 inch)	quick view	6 days, 2611 pcs.	233 ֏ ×	from 10 pcs. — 193 ֏

MOSFET and IGBT drivers Infineon

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