IGBT modules

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Yerevan
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10 days,
9 pcs.
73 700 ֏ ×
from 2 pcs. — 70 200 ֏
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10 days,
7 pcs.
58 400 ֏ ×
from 2 pcs. — 55 600 ֏
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10 days,
20 pcs.
14 200 ֏ ×
from 5 pcs. — 13 500 ֏
FF100R12RT4HOSA1, IGBT Module 1200V 100A 555W
10 days, 48 pcs.
Brand: Infineon
Structure: half-bridge
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 100
Maximum power dissipation, W: 555
Operating temperature (Tj), ° C: -40…+150
Housing: AG-34MM
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10 days,
48 pcs.
35 700 ֏ ×
from 3 pcs. — 33 600 ֏
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10 days,
20 pcs.
33 300 ֏ ×
from 5 pcs. — 31 700 ֏
FF300R12KE3HOSA1, IGBT module 1200V 440A 1450W
10 days, 47 pcs.
Brand: Infineon
Structure: half-bridge
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 440
Maximum power dissipation, W: 1450
Operating temperature (Tj), ° C: -40…+125
Housing: AG-62MM
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10 days,
47 pcs.
99 300 ֏ ×
from 3 pcs. — 94 200 ֏
FP25R12W2T4BOMA1, IGBT module 1200V 39A 175W
10 days, 47 pcs.
Brand: Infineon
Structure: 3-F inverter+brake transistor+ rectifier
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 39
Maximum power dissipation, W: 175
Operating temperature (Tj), ° C: -40…+150
Housing: AG-EASY2B
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10 days,
47 pcs.
19 800 ֏ ×
from 3 pcs. — 16 800 ֏
FP75R12KE3, IGBT Module 1200V 105A 355W.
10 days, 26 pcs.
Brand: Infineon
Structure: 3-F inverter+brake transistor+ rectifier
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 105
Maximum power dissipation, W: 355
Operating temperature (Tj), ° C: -40…+125
Housing: AG-ECONO3
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10 days,
26 pcs.
170 000 ֏ ×
from 3 pcs. — 169 000 ֏
SKIIP23NAB126V1 + Standard Lid, IGBT module (3-phase diode bridge + brake chopper + 3-phase bridge inverter) [MiniSKiiP 2]
10 days, 40 pcs.
Brand: Semikron
Structure: 3-F inverter+brake transistor+ rectifier
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 41
Operating temperature (Tj), ° C: -40…+150
Housing: MiniSKiiP 2
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10 days,
40 pcs.
94 800 ֏
73 500 ֏
×
from 5 pcs. — 72 300 ֏
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10 days,
23 pcs.
41 400 ֏ ×
from 3 pcs. — 40 200 ֏
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10 days,
80 pcs.
15 200 ֏ ×
from 5 pcs. — 14 500 ֏
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10 days,
14 pcs.
16 700 ֏ ×
from 5 pcs. — 15 900 ֏
SKM100GB12T4, IGBT Module, 2-transistors, 1200V, 100A [SEMITRANS 2]
10 days, 99 pcs.
Brand: Semikron
Structure: half-bridge
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 160
Operating temperature (Tj), ° C: -40…+170
Housing: SEMITRANS 2
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10 days,
99 pcs.
49 700 ֏ ×
from 5 pcs. — 48 400 ֏
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10 days,
31 pcs.
36 300 ֏ ×
from 5 pcs. — 34 600 ֏
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10 days,
10 pcs.
41 400 ֏ ×
from 5 pcs. — 39 400 ֏
BSM50GX120DN2BOSA1, IGBT Module 1200V 80A 360W. [EOL]
10 days, 16 pcs.
Brand: Infineon
Structure: 3-F inverter+brake transistor+ rectifier
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 72
Maximum power dissipation, W: 350
Operating temperature (Tj), ° C: +150(max)
Housing: ECONOPACK 2K
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10 days,
16 pcs.
76 800 ֏ ×
from 2 pcs. — 75 300 ֏
BSM75GB120DN2HOSA1, IGBT power module, half-bridge, 1200V, 105A. [EOL]
10 days, 26 pcs.
Brand: Infineon
Structure: half-bridge
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 105
Maximum power dissipation, W: 625
Operating temperature (Tj), ° C: +150(max)
Housing: HALF-BRIDGE 1
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10 days,
26 pcs.
51 600 ֏ ×
from 2 pcs. — 43 700 ֏
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10 days,
3 pcs.
29 000 ֏ ×
FP25R12KT3, IGBT Module 1200V 25A.
10 days, 13 pcs.
Brand: Infineon
Structure: 3-F inverter+brake transistor+ rectifier
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 40
Maximum power dissipation, W: 125
Operating temperature (Tj), ° C: -40…+125
Housing: AG-ECONO2C
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10 days,
13 pcs.
41 700 ֏ ×
from 5 pcs. — 39 800 ֏
FS75R12KE3, IGBT Module 1200V 105A 350W
10 days, 17 pcs.
Brand: Infineon
Structure: 3-ph inverter
Maximum CE voltage, V: 1200
Maximum CE current at 25 ° C, A: 105
Maximum power dissipation, W: 350
Operating temperature (Tj), ° C: +150(max)
Housing: AG-ECONO2B
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10 days,
17 pcs.
56 800 ֏ ×
from 3 pcs. — 48 000 ֏
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IGBT modules are power devices based on IGBT transistors. These modules are widely used in converter technology.

IGBT modules operate with voltages ranging from 600 to 6500 V and currents from 50 to 3500 A.

IGBT modules can have different designs, ranging from single power switches and choppers, to full three-phase bridges and single-phase three-level circuits.

The IGBT module chips are manufactured using the most advanced semiconductor technology, which achieves high junction temperature, low voltage drop and low switching loss, thus improving the reliability of these modules.

You can receive an order at our office and pick-up point in Yerevan. Delivery of goods is carried out throughout Armenia by courier and Haypost.
Order delivery to Yerevan, Gyumri, Vanadzor and more than 40 cities and towns of Armenia.

Products from the group «IGBT modules» you can buy wholesale and retail.