IRLZ14PBF,транзистор, MOSFET Transistor, N Channel, 10 A, 60 V, 200 mohm, 5 V, 2 V,Транзистор

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468 ֏

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Номенклатурный номер: 9000315260

МОП-транзистор N-Chan 60V 10 Amp

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±10
Maximum Gate Threshold Voltage (V)	2
Maximum Continuous Drain Current (A)	10
Maximum Drain Source Resistance (mOhm)	200@5V
Typical Gate Charge @ Vgs (nC)	8.4(Max)@5V
Typical Gate to Drain Charge (nC)	6(Max)
Typical Gate to Source Charge (nC)	3.5(Max)
Typical Reverse Recovery Charge (nC)	340
Typical Input Capacitance @ Vds (pF)	400@25V
Typical Output Capacitance (pF)	170
Maximum Power Dissipation (mW)	43000
Typical Fall Time (ns)	26
Typical Rise Time (ns)	110
Typical Turn-Off Delay Time (ns)	17
Typical Turn-On Delay Time (ns)	9.3
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175
Automotive	No
Pin Count	3
Supplier Package	TO-220AB
Standard Package Name	TO-220
Military	No
Mounting	Through Hole
Package Height	9.01(Max)
Package Length	10.41(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole
Вес, г	2