MJF15030G, Транзистор
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см. техническую документацию
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Описание
TRANSISTOR, NPN, 150V, 8A, TO220FP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:30MHz; Power Dissipation Pd:2W; DC Collector Current:8A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:1A; Current Ic hFE:4mA; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:40; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:50W; Voltage Vcbo:150V
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 150 V |
| Collector- Emitter Voltage VCEO Max | 150 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Configuration | Single |
| Continuous Collector Current | 8 A |
| DC Collector/Base Gain hfe Min | 20 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 50 |
| Gain Bandwidth Product fT | 30 MHz |
| Height | 9.24 mm(Max) |
| Length | 10.63 mm(Max) |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 36 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJF15030 |
| Transistor Polarity | NPN |
| Unit Weight | 0.08113 oz |
| Width | 4.9 mm(Max) |
| Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 191 КБ
Datasheet MJF15030G
pdf, 128 КБ
