MMBT8099LT1G, Транзистор NPN 80В 0.5A 0.225Вт [SOT-23-3]
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Описание
TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-2
Технические параметры
| Category | Bipolar Small Signal |
| Collector Current (DC) | 0.5(A) |
| Collector Current (DC) (Max) | 0.5 A |
| Collector-Base Voltage | 80(V) |
| Collector-Emitter Voltage | 80(V) |
| Configuration | Single |
| DC Current Gain | 100 |
| DC Current Gain (Min) | 100 |
| Emitter-Base Voltage | 6(V) |
| Frequency | 150(MHz) |
| Frequency (Max) | 150 MHz |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Package Type | SOT-23 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Power Dissipation | 0.3(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |
| Вес, г | 0.3 |
Техническая документация
Datasheet MMBT8099LT1G
pdf, 120 КБ
2103261505_onsemi-MMBT8099LT1G_C891693 (1)
pdf, 163 КБ
