MUN5214T1G, Транзистор
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Описание
This series of digital transistors is designed to replace a single device and its external resistor bias network.
Технические параметры
| Brand | ON Semiconductor |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain Hfe Min | 80 |
| DC Current Gain HFE Max | 80 |
| Factory Pack Quantity | 3000 |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 202 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| Product Type | BJTs-Bipolar Transistors-Pre-Biased |
| Series | MUN5214 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Typical Input Resistor | 10 kOhms |
| Typical Resistor Ratio | 0.21 |
| Вес, г | 0.017 |
Техническая документация
Datasheet
pdf, 135 КБ
Datasheet DTC114YM3T5G
pdf, 133 КБ
