Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › UnitedSiC › UF3C120400K3S, Транзистор SiC FET [TO-247]

UF3C120400K3S, Транзистор SiC FET [TO-247]

Изображения служат только для ознакомления,
см. техническую документацию

3 шт. с центрального склада, срок 9 дней

14 400 ֏

7 600 ֏

от 5 шт. — 7 100 ֏

Добавить в корзину 1 шт. на сумму 7 600 ֏

Альтернативные предложения1

Номенклатурный номер: 9000999953

Бренд: UnitedSiC

Описание

UF3C SiC FETs

UnitedSiC UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The UnitedSiC UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D 2 PAK-3, D 2 PAK-7, D 2 PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

Технические параметры

Brand:	UnitedSiC
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	600
Fall Time:	18 ns
Id - Continuous Drain Current:	7.6 A
Manufacturer:	UnitedSiC
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	100 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27.5 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	1.07 Ohms
Rise Time:	10 ns
Series:	UF3C
Subcategory:	MOSFETs
Technology:	SiC
Tradename:	SiC FET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Вес, г	12.31