MJF15030G, Биполярный транзистор, NPN, 150 В, 8 А, 36W

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590 ֏

Мин. кол-во для заказа 4 шт.

от 8 шт. — 550 ֏

от 15 шт. — 488 ֏

от 29 шт. — 467 ֏

Добавить в корзину 4 шт. на сумму 2 360 ֏

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Номенклатурный номер: 8000096734

Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы

Биполярный транзистор, NPN, 150 В, 8 А, 36W

Корпус	TO-220FP
Brand	ON Semiconductor
Collector- Base Voltage VCBO	150 V
Collector- Emitter Voltage VCEO Max	150 V
Collector-Emitter Saturation Voltage	0.5 V
Configuration	Single
Continuous Collector Current	8 A
DC Collector/Base Gain hfe Min	20
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	50
Gain Bandwidth Product fT	30 MHz
Height	9.24 mm(Max)
Length	10.63 mm(Max)
Manufacturer	ON Semiconductor
Maximum DC Collector Current	8 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Package / Case	TO-220FP-3
Packaging	Tube
Pd - Power Dissipation	36 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	MJF15030
Transistor Polarity	NPN
Unit Weight	0.08113 oz
Width	4.9 mm(Max)
Automotive	No
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	Si
Maximum Collector Base Voltage (V)	150
Maximum Collector Cut-Off Current (nA)	10000
Maximum Collector-Emitter Saturation Voltage (V)	0.5@0.1A@1A
Maximum Collector-Emitter Voltage (V)	150
Maximum DC Collector Current (A)	8
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Maximum Transition Frequency (MHz)	30(Min)
Minimum DC Current Gain	40@100mA@2V\|40@2A@2V\|40@3A@2V\|20@4A@2V
Minimum Operating Temperature (°C)	-65
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Standard Package Name	TO
Supplier Package	TO-220FP
Tab	Tab
Type	NPN
Вес, г	3.5