MJD253T4G, Биполярный транзистор, PNP, 100 В, 4 А, 12.5Вт
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, PNP, 100 В, 4 А, 12.5Вт
Технические параметры
| Корпус | DPAK/TO-252AA | |
| EU RoHS | Compliant with Exemption | |
| ECCN (US) | EAR99 | |
| Part Status | Active | |
| HTS | 8541.29.00.95 | |
| Type | PNP | |
| Product Category | Bipolar Power | |
| Material | Si | |
| Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 100 | |
| Maximum Collector-Emitter Voltage (V) | 100 | |
| Maximum Emitter Base Voltage (V) | 7 | |
| Maximum Base Current (A) | 1 | |
| Operating Junction Temperature (°C) | -65 to 150 | |
| Maximum Base Emitter Saturation Voltage (V) | 1.8@200mA@2A | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@50mA@500mA|0.6@100mA@1A | |
| Maximum DC Collector Current (A) | 4 | |
| Maximum Collector Cut-Off Current (nA) | 100 | |
| Minimum DC Current Gain | 15@1A@1V|40@200mA@1V | |
| Maximum Power Dissipation (mW) | 1400 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 150 | |
| Packaging | Tape and Reel | |
| Automotive | No | |
| Standard Package Name | TO-252 | |
| Pin Count | 3 | |
| Supplier Package | DPAK | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 2.38(Max) | |
| Package Length | 6.73(Max) | |
| Package Width | 6.22(Max) | |
| PCB changed | 2 | |
| Tab | Tab | |
| Lead Shape | Gull-wing | |
| Brand | ON Semiconductor | |
| Collector- Base Voltage VCBO | 100 V | |
| Collector- Emitter Voltage VCEO Max | 100 V | |
| Collector-Emitter Saturation Voltage | 0.6 V | |
| Continuous Collector Current | 4 A | |
| DC Collector/Base Gain hfe Min | 40 | |
| Emitter- Base Voltage VEBO | 7 V | |
| Factory Pack Quantity | 2500 | |
| Gain Bandwidth Product fT | 40 MHz | |
| Height | 2.38 mm | |
| Length | 6.73 mm | |
| Manufacturer | ON Semiconductor | |
| Maximum DC Collector Current | 4 A | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -65 C | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-252-3(DPAK) | |
| Pd - Power Dissipation | 12.5 W | |
| RoHS | Details | |
| Series | MJD253 | |
| Transistor Polarity | PNP | |
| Width | 6.22 mm | |
| Collector Emitter Voltage Max | 100В | |
| DC Current Gain hFE Min | 15hFE | |
| DC Усиление Тока hFE | 15hFE | |
| Power Dissipation | 12.5Вт | |
| Количество Выводов | 3вывод(-ов) | |
| Максимальная Рабочая Температура | 150°C | |
| Монтаж транзистора | Surface Mount | |
| Полярность Транзистора | PNP | |
| Стиль Корпуса Транзистора | TO-252(DPAK) | |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный | |
| Частота Перехода ft | 40МГц | |
| Maximum Collector Base Voltage | 100 V dc | |
| Maximum Collector Emitter Voltage | -100 V | |
| Maximum Emitter Base Voltage | 7 V | |
| Maximum Operating Frequency | 10 MHz | |
| Maximum Power Dissipation | 12.5 W | |
| Mounting Type | Surface Mount | |
| Package Type | DPAK(TO-252) | |
| Transistor Configuration | Single | |
| Transistor Type | PNP | |
| Вес, г | 0.66 |
