BSS123NH6433XTMA1
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Описание
Электроэлемент
MOSFET, N-CH, 100V, 0.19A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):2.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150В°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 10000 |
| Fall Time | 22 ns |
| Forward Transconductance - Min | 410 mS |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 190 mA |
| Length | 2.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape |
| Part # Aliases | BSS123N BSS123NH6433XT H6433 SP000939268 |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product Category | MOSFET |
| Qg - Gate Charge | 900 pC |
| Rds On - Drain-Source Resistance | 2.4 Ohms |
| Rise Time | 3.2 ns |
| RoHS | Details |
| Series | BSS123 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 7.4 ns |
| Typical Turn-On Delay Time | 2.3 ns |
| Unit Weight | 0.000282 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Width | 1.3 mm |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Process Technology | OptiMOS |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Gate Threshold Voltage (V) | 1.8 |
| Maximum Continuous Drain Current (A) | 0.19 |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Maximum IDSS (uA) | 0.01 |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Typical Gate Charge @ Vgs (nC) | 0.6@10V |
| Typical Gate Charge @ 10V (nC) | 0.6 |
| Typical Input Capacitance @ Vds (pF) | 15.7@25V |
| Maximum Power Dissipation (mW) | 500 |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 3.2 |
| Typical Turn-Off Delay Time (ns) | 7.4 |
| Typical Turn-On Delay Time (ns) | 2.3 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Military | No |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 410 mS |
| Id - Continuous Drain Current: | 190 mA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | BSS123N H6433 SP000939268 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 600 pC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 2.4 Ohms |
| Rise Time: | 3.2 ns |
| Series: | BSS123 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 7.4 ns |
| Typical Turn-On Delay Time: | 2.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Вес, г | 0.008 |
Техническая документация
Datasheet
pdf, 569 КБ
Datasheet BSS123NH6327XTSA1
pdf, 627 КБ
Datasheet BSS123NH6433XTMA1
pdf, 577 КБ
