BSR202NL6327
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см. техническую документацию
1 920 ֏
от 2 шт. —
1 530 ֏
от 5 шт. —
1 240 ֏
от 10 шт. —
1 130 ֏
Добавить в корзину 1 шт.
на сумму 1 920 ֏
Описание
Электроэлемент
N-Channel MOSFET, 3.8 A, 20 V, 3-Pin SOT-346 Infineon BSR202NL6327HTSA1
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 16.7 ns |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 3.8 A |
| Length | 2.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Part # Aliases | BSR202NL6327HTSA1 BSR202NL6327XT SP000257784 |
| Pd - Power Dissipation | 500 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 21 mOhms |
| Rise Time | 16.7 ns |
| RoHS | Details |
| Series | BSR202 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 8.8 ns |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 12 V |
| Width | 1.3 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 3.7 ns |
| Forward Transconductance - Min: | 17 S |
| Id - Continuous Drain Current: | 3.8 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SC-59-3 |
| Part # Aliases: | SP000257784 BSR22NL6327XT BSR202NL6327HTSA1 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 5.8 nC |
| Rds On - Drain-Source Resistance: | 17 mOhms |
| Rise Time: | 16.7 ns |
| Series: | BSR202 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 8.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 950 mV |
| Вес, г | 0.008 |
Техническая документация
Datasheet BSR202N L6327
pdf, 159 КБ
