BSC009NE2LS
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1 960 ֏
от 2 шт. —
1 530 ֏
от 5 шт. —
1 250 ֏
от 10 шт. —
1 150 ֏
Добавить в корзину 1 шт.
на сумму 1 960 ֏
Описание
Электроэлемент
MOSFET Transistor, N Channel, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V , RoHS Compliant: Yes
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 5000 |
Fall Time | 19 ns |
Forward Transconductance - Min | 85 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 100 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Reel |
Part # Aliases | BSC009NE2LSATMA1 BSC009NE2LSXT SP000893362 |
Pd - Power Dissipation | 96 W |
Product Category | MOSFET |
Qg - Gate Charge | 168 nC |
Rds On - Drain-Source Resistance | 1 mOhms |
Rise Time | 33 ns |
RoHS | Details |
Series | BSC009NE2 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 48 ns |
Typical Turn-On Delay Time | 10 ns |
Vds - Drain-Source Breakdown Voltage | 25 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Width | 5.15 mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 5000 |
Fall Time: | 19 ns |
Forward Transconductance - Min: | 85 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TDSON-8 |
Part # Aliases: | SP000893362 BSC9NE2LSXT BSC009NE2LSATMA1 |
Pd - Power Dissipation: | 96 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 168 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 1 mOhms |
Rise Time: | 33 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 48 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Вес, г | 0.116 |
Техническая документация
Datasheet
pdf, 1335 КБ