BSZ0506NSATMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 700 ֏
от 2 шт. —
1 320 ֏
от 5 шт. —
1 030 ֏
от 10 шт. —
910 ֏
Добавить в корзину 1 шт.
на сумму 1 700 ֏
Описание
Электроэлемент
MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Pow
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 2 ns |
| Forward Transconductance - Min | 98 S |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 40 A |
| Length | 3.3 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | TSDSON-8 |
| Packaging | MouseReel |
| Part # Aliases | BSZ0506NS SP001281636 |
| Pd - Power Dissipation | 27 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 11 nC |
| Qualification | AEC-Q100 |
| Rds On - Drain-Source Resistance | 4.4 mOhms |
| Rise Time | 2.4 ns |
| RoHS | Details |
| Series | OptiMOS 5 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 2.3 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Width | 3.3 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 49 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ0506NS SP001281636 |
| Pd - Power Dissipation: | 27 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11 nC |
| Rds On - Drain-Source Resistance: | 4.4 mOhms |
| Rise Time: | 2.4 ns |
| Series: | OptiMOS 5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 13 ns |
| Typical Turn-On Delay Time: | 2.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 61 A |
| Package Type | PG-TSDSON-8 FL |
