BSC014NE2LSI
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см. техническую документацию
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1 600 ֏
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1 500 ֏
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Описание
Электроэлемент
Trans MOSFET N-CH 25V 33A Automotive 8-Pin TDSON EP T/R
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 5000 |
Fall Time | 3.6 ns |
Forward Transconductance - Min | 70 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 100 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Reel |
Part # Aliases | BSC014NE2LSIATMA1 BSC014NE2LSIXT SP000911336 |
Pd - Power Dissipation | 74 W |
Product Category | MOSFET |
Qg - Gate Charge | 52 nC |
Rds On - Drain-Source Resistance | 1.2 mOhms |
Rise Time | 5 ns |
RoHS | Details |
Series | BSC014NE2 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 5 ns |
Vds - Drain-Source Breakdown Voltage | 25 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Width | 5.15 mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 5000 |
Fall Time: | 3.6 ns |
Forward Transconductance - Min: | 70 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TDSON-8 |
Part # Aliases: | BSC14NE2LSIXT SP000911336 BSC014NE2LSIATMA1 |
Pd - Power Dissipation: | 74 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 52 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 1.2 mOhms |
Rise Time: | 5 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Вес, г | 0.1183 |
Техническая документация
Datasheet
pdf, 1336 КБ