BSR92PH6327XTSA1

BSR92PH6327XTSA1
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см. техническую документацию
680 ֏
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от 5 шт.468 ֏
от 10 шт.370 ֏
от 100 шт.288 ֏
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Номенклатурный номер: 8001945986

Описание

Электроэлемент
MOSFET, P-CH, -250V, -0.14A, SC-59-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-140mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1

Технические параметры

AEC Qualified Number AEC-Q101
Automotive Yes
Channel Mode Enhancement
Channel Type P
Maximum Continuous Drain Current - (A) 0.14
Maximum Drain Source Resistance - (mOhm) 11000@10V
Maximum Drain Source Voltage - (V) 250
Maximum Gate Source Voltage - (V) ??20
Maximum Gate Threshold Voltage - (V) 1
Maximum Power Dissipation - (mW) 500
Military No
Number of Elements per Chip 1
Operating Temperature - (??C) -55~150
Packaging Tape and Reel
Pin Count 3
Process Technology SIPMOS
Supplier Package SC-59
Typical Gate Charge @ 10V - (nC) 3.6
Typical Gate Charge @ Vgs - (nC) 3.6@10V
Typical Input Capacitance @ Vds - (pF) 82@25V
Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 71 ns
Forward Transconductance - Min: 100 mS
Id - Continuous Drain Current: 140 mA
Manufacturer: Infineon
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SC-59-3
Part # Aliases: BSR92P H6327 SP001101038
Pd - Power Dissipation: 500 mW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 3.6 nC
Rds On - Drain-Source Resistance: 11 Ohms
Rise Time: 6.3 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 75 ns
Typical Turn-On Delay Time: 6.4 ns
Vds - Drain-Source Breakdown Voltage: 250 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Вес, г 0.03

Техническая документация

Datasheet
pdf, 507 КБ