STS1NK60Z
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см. техническую документацию
см. техническую документацию
125 шт. с центрального склада, срок 2-3 недели
468 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
221 ֏
от 10 шт. —
145 ֏
от 100 шт. —
75 ֏
Добавить в корзину 2 шт.
на сумму 936 ֏
Альтернативные предложения3
Описание
Электроэлемент
N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain |
| Factory Pack Quantity | 2500 |
| Fall Time | 28 ns |
| Height | 1.65 mm |
| Id - Continuous Drain Current | 250 mA |
| Length | 5 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOIC-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 15 Ohms |
| Rise Time | 5 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 5.5 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 28 ns |
| Id - Continuous Drain Current: | 250 mA |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.9 nC |
| Rds On - Drain-Source Resistance: | 15 Ohms |
| Rise Time: | 5 ns |
| Series: | STS1NK60Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 13 ns |
| Typical Turn-On Delay Time: | 5.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.25 |
| Maximum Drain Source Resistance (mOhm) | 15000@10V |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Standard Package Name | SO |
| Supplier Package | SO N |
| Supplier Temperature Grade | Industrial |
| Typical Fall Time (ns) | 28 |
| Typical Gate Charge @ 10V (nC) | 4.9 |
| Typical Gate Charge @ Vgs (nC) | 4.9@10V |
| Typical Input Capacitance @ Vds (pF) | 94@25V |
| Typical Rise Time (ns) | 5 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Turn-On Delay Time (ns) | 5.5 |
| Вес, г | 2.3 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 мая1 | бесплатно |
| HayPost | 3 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
