STU6N90K5
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см. техническую документацию
см. техническую документацию
98 шт. с центрального склада, срок 2-3 недели
2 170 ֏
от 2 шт. —
1 700 ֏
от 5 шт. —
1 380 ֏
от 10 шт. —
1 270 ֏
Добавить в корзину 1 шт.
на сумму 2 170 ֏
Альтернативные предложения1
Описание
Электроэлемент
MOSFET N-channel 900 V, 0.91 Ohm typ 6 A MDmesh K5 Power MOSFET in an IPAK package
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 15.5 ns |
| Id - Continuous Drain Current | 6 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-251-3 |
| Pd - Power Dissipation | 110 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 11 nC |
| Rds On - Drain-Source Resistance | 910 mOhms |
| Rise Time | 12.2 ns |
| RoHS | Details |
| Series | MDmesh K5 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 30.4 ns |
| Typical Turn-On Delay Time | 12.4 ns |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | +/-30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 15.5 ns |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-251-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11 nC |
| Rds On - Drain-Source Resistance: | 910 mOhms |
| Rise Time: | 12.2 ns |
| Series: | STU6N90K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 30.4 ns |
| Typical Turn-On Delay Time: | 12.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.8178 |
Техническая документация
Datasheet
pdf, 559 КБ
Datasheet STU6N90K5
pdf, 698 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 мая1 | бесплатно |
| HayPost | 3 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
