IPA60R060P7XKSA1
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см. техническую документацию
см. техническую документацию
8 900 ֏
от 2 шт. —
8 200 ֏
от 5 шт. —
7 800 ֏
от 9 шт. —
7 500 ֏
Добавить в корзину 1 шт.
на сумму 8 900 ֏
Описание
Электроэлемент
MOSFET, N-CH, 600V, 48A, 29W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:29W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 48A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2895pF @ 400V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 29W(Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 15.9A, 10V |
| Series | CoolMOSв(ў P7 |
| Supplier Device Package | PG-TO220 Full Pack |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 800ВµA |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 500 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 48 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | IPA60R060P7 SP001658404 |
| Pd - Power Dissipation: | 29 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Rds On - Drain-Source Resistance: | 49 mOhms |
| Rise Time: | 12 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 79 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 3.065 |
Техническая документация
Datasheet
pdf, 1063 КБ
Datasheet IPA60R060P7XKSA1
pdf, 1126 КБ
