BSC034N03LSG
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см. техническую документацию
см. техническую документацию
4 300 ֏
от 2 шт. —
3 790 ֏
от 5 шт. —
3 440 ֏
от 9 шт. —
3 280 ֏
Добавить в корзину 1 шт.
на сумму 4 300 ֏
Описание
Электроэлемент
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Factory Pack Quantity | 5000 |
| Fall Time | 4.6 ns |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC034N03LSGATMA1 SP000475948 |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 3.4 mOhms |
| Rise Time | 4.8 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 28 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 4.6 ns |
| Forward Transconductance - Min: | 45 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | SP000475948 BSC34N3LSGXT BSC034N03LSGATMA1 |
| Pd - Power Dissipation: | 57 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Rds On - Drain-Source Resistance: | 2.8 mOhms |
| Rise Time: | 4.8 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 28 ns |
| Typical Turn-On Delay Time: | 6.9 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.14 |
Техническая документация
Datasheet
pdf, 1962 КБ
