STN1HNK60
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
63 шт. с центрального склада, срок 3 недели
600 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
340 ֏
от 10 шт. —
260 ֏
Добавить в корзину 2 шт.
на сумму 1 200 ֏
Альтернативные предложения5
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 600В, 0,4А, 3,3Вт, SOT223 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single Dual Drain |
Factory Pack Quantity | 4000 |
Fall Time | 25 ns |
Height | 1.8 mm |
Id - Continuous Drain Current | 400 mA |
Length | 6.5 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-223-3 |
Packaging | Reel |
Pd - Power Dissipation | 3.3 W |
Product Category | MOSFET |
Qg - Gate Charge | 7 nC |
Rds On - Drain-Source Resistance | 8.5 Ohms |
Rise Time | 5 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 6.5 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 3.5 mm |
Base Product Number | STN1HNK60 -> |
Current - Continuous Drain (Id) @ 25В°C | 400mA (Tc) |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Power Dissipation (Max) | 3.3W (Tc) |
Rds On (Max) @ Id, Vgs | 8.5Ohm @ 500mA, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-223 |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 3.7V @ 250ВµA |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Process Technology | SuperMESH |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Continuous Drain Current (A) | 0.4 |
Maximum Drain Source Resistance (mOhm) | 8500@10V |
Typical Gate Charge @ Vgs (nC) | 7@10V |
Typical Gate Charge @ 10V (nC) | 7 |
Typical Input Capacitance @ Vds (pF) | 156@25V |
Maximum Power Dissipation (mW) | 3300 |
Typical Fall Time (ns) | 25 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Turn-On Delay Time (ns) | 6.5 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Automotive | No |
Standard Package Name | SOT |
Pin Count | 4 |
Supplier Package | SOT-223 |
Military | No |
Mounting | Surface Mount |
Package Height | 1.8(Max) |
Package Length | 6.5 |
Package Width | 3.5 |
PCB changed | 3 |
Tab | Tab |
Lead Shape | Gull-wing |
Drain Source On State Resistance | 8Ом |
Power Dissipation | 3.3Вт |
Количество Выводов | 3вывод(-ов) |
Максимальная Рабочая Температура | 150 C |
Монтаж транзистора | Surface Mount |
Напряжение Измерения Rds(on) | 10В |
Напряжение Истока-стока Vds | 600В |
Непрерывный Ток Стока | 500мА |
Полярность Транзистора | N Канал |
Пороговое Напряжение Vgs | 3В |
Рассеиваемая Мощность | 3.3Вт |
Сопротивление во Включенном Состоянии Rds(on) | 8Ом |
Стиль Корпуса Транзистора | SOT-223 |
Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Fall Time: | 25 ns |
Id - Continuous Drain Current: | 400 mA |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-223-4 |
Pd - Power Dissipation: | 3.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7 nC |
Rds On - Drain-Source Resistance: | 8.5 Ohms |
Rise Time: | 5 ns |
Series: | STN1HNK60 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 6.5 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2.25 V |
Maximum Continuous Drain Current | 400 mA |
Maximum Drain Source Resistance | 8.5 Ω |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 3.7V |
Maximum Power Dissipation | 3.3 W |
Minimum Gate Threshold Voltage | 2.25V |
Package Type | SOT-223 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7 nC @ 10 V |
Вес, г | 0.85 |
Техническая документация
Datasheet
pdf, 427 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 455 КБ
Datasheet STN1HNK60
pdf, 467 КБ
Datasheet STN1HNK60
pdf, 466 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 3 июня1 | бесплатно |
HayPost | 6 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг