AUIRFR5410
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см. техническую документацию
см. техническую документацию
1 960 ֏
от 2 шт. —
1 490 ֏
от 5 шт. —
1 180 ֏
от 10 шт. —
1 070 ֏
Добавить в корзину 1 шт.
на сумму 1 960 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs
Технические параметры
| Brand | Infineon/IR |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 46 ns |
| Height | 2.3 mm |
| Id - Continuous Drain Current | -3.1 A |
| Length | 6.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 66 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 205 mOhms |
| Rise Time | 58 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 15 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | -100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 6.22 mm |
| Вес, г | 5 |
Техническая документация
AUIRFR5410 datasheet
pdf, 260 КБ
Datasheet
pdf, 318 КБ
