BSC067N06LS3GATMA1
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Описание
Электроэлемент
MOSFET, N CHANNEL, 60V, 50A, 8TDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.0054ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 15A(Ta), 50A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 30V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 2.5W(Ta), 69W(Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 50A, 10V |
| Series | OptiMOSв(ў |
| Supplier Device Package | PG-TDSON-8-5 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 35ВµA |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 38 S |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC067N06LS3 G SP000451084 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Rds On - Drain-Source Resistance: | 6.7 mOhms |
| Rise Time: | 26 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 37 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 1062 КБ
