IPB320N20N3GATMA1
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Описание
Электроэлемент
MOSFET, N CHANNEL, 200V, 34A, TO263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:34A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.028ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 34 A |
| Maximum Drain Source Resistance | 32 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 136 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | OptiMOS 3 |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Width | 9.45mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 27 S |
| Id - Continuous Drain Current: | 34 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB320N20N3 G SP000691172 |
| Pd - Power Dissipation: | 136 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Rise Time: | 9 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1.81 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 419 КБ
Datasheet
pdf, 420 КБ
Datasheet IPB320N20N3GATMA1
pdf, 419 КБ
