STW45N65M5
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см. техническую документацию
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Альтернативные предложения4
Описание
Электроэлемент
MOSFET, N-CH, 650V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 35A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3375pF @ 100V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 210W(Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 19.5A, 10V |
| Series | MDmeshв(ў V |
| Supplier Device Package | TO-247 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Base Product Number | STW45 -> |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Id - Continuous Drain Current: | 35 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 210 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 82 nC |
| Rds On - Drain-Source Resistance: | 78 mOhms |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.002 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 5 июня1 | бесплатно |
| HayPost | 9 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
