BSS670S2LH6327XTSA1
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Описание
Электроэлемент
MOSFET, N CH, 55V, 0.54A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.346ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V
Технические параметры
| RoHS Compliant | Yes |
| Base Product Number | BSS670 -> |
| Current - Continuous Drain (Id) @ 25В°C | 540mA (Ta) |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.26nC @ 10V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 360mW (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 270mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | OptiMOSв„ў -> |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 2.7ВµA |
| Case | SOT23 |
| Drain current | 0.54A |
| Drain-source voltage | 55V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Manufacturer | INFINEON TECHNOLOGIES |
| Mounting | SMD |
| On-state resistance | 0.65Ω |
| Polarisation | unipolar |
| Power dissipation | 0.36W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.054 |
Техническая документация
Datasheet BSS670S2LH6327XTSA1
pdf, 145 КБ
